BUX86-6 Datasheet and Replacement
Type Designator: BUX86-6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 375 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO126
BUX86-6 Substitution
BUX86-6 Datasheet (PDF)
bux86p 87p 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTIONHigh voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use inconverters, inverters, switching regulators, motor control systems and switching applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITBUX 86P 87
Datasheet: BUX84 , BUX84-6 , BUX84F , BUX85 , BUX85F , BUX86 , BUX86-4 , BUX86-5 , TIP41C , BUX86-7 , BUX86P , BUX87 , BUX87-9 , BUX87P , BUX88 , BUX90 , BUX91 .
History: 2SA1753 | 2SA2044 | 2SC143A | SK3194 | KT3102DM | 2SD498 | UMH10N
Keywords - BUX86-6 transistor datasheet
BUX86-6 cross reference
BUX86-6 equivalent finder
BUX86-6 lookup
BUX86-6 substitution
BUX86-6 replacement
History: 2SA1753 | 2SA2044 | 2SC143A | SK3194 | KT3102DM | 2SD498 | UMH10N



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
c6090 | ksa1015yta | 2n4240 | 2n5210 transistor | toshiba 2sc2290 | pk6d0ba mosfet | 2sd726 | c536 transistor equivalent