BUX86-6 Datasheet and Replacement
Type Designator: BUX86-6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 375 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO126
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BUX86-6 Datasheet (PDF)
bux86p 87p 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTIONHigh voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use inconverters, inverters, switching regulators, motor control systems and switching applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITBUX 86P 87
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SA1262 | 2SA1407E | NB221YX | 2SC3712 | BUX37 | 2N2872 | T11
Keywords - BUX86-6 transistor datasheet
BUX86-6 cross reference
BUX86-6 equivalent finder
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History: 2SA1262 | 2SA1407E | NB221YX | 2SC3712 | BUX37 | 2N2872 | T11



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