BUX86-7 Datasheet and Replacement
Type Designator: BUX86-7
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO126
BUX86-7 Substitution
BUX86-7 Datasheet (PDF)
bux86p 87p 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTIONHigh voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use inconverters, inverters, switching regulators, motor control systems and switching applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITBUX 86P 87
Datasheet: BUX84-6 , BUX84F , BUX85 , BUX85F , BUX86 , BUX86-4 , BUX86-5 , BUX86-6 , BD139 , BUX86P , BUX87 , BUX87-9 , BUX87P , BUX88 , BUX90 , BUX91 , BUX92 .
History: KT210A | FHT5401-ME | BLW10 | TMPA812M5 | BUF405AFI | BC846BW-AU | SC159
Keywords - BUX86-7 transistor datasheet
BUX86-7 cross reference
BUX86-7 equivalent finder
BUX86-7 lookup
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BUX86-7 replacement
History: KT210A | FHT5401-ME | BLW10 | TMPA812M5 | BUF405AFI | BC846BW-AU | SC159



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