All Transistors. BUY55-4 Datasheet

 

BUY55-4 Datasheet and Replacement


   Type Designator: BUY55-4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
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BUY55-4 Datasheet (PDF)

 9.1. Size:202K  inchange semiconductor
 buy55.pdf pdf_icon

BUY55-4

isc Silicon NPN Power Transistor BUY55DESCRIPTION Collector-Emitter Breakdown Voltage-: V = 125V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general switching applications at higher outputs.ABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KA4A4L | KTC2553 | STC401 | 2SD501 | 2SC822Z | 2SB292 | BFQ58

Keywords - BUY55-4 transistor datasheet

 BUY55-4 cross reference
 BUY55-4 equivalent finder
 BUY55-4 lookup
 BUY55-4 substitution
 BUY55-4 replacement

 

 
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