BUY55-4 Specs and Replacement

Type Designator: BUY55-4

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 125 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

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BUY55-4 datasheet

 9.1. Size:202K  inchange semiconductor

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BUY55-4

isc Silicon NPN Power Transistor BUY55 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 125V(Min.) (BR)CEO Low Collector Saturation Voltage- V = 1.5V@ I = 7A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general switching applications at higher outputs. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

Detailed specifications: BUY52, BUY52A, BUY53, BUY53A, BUY54, BUY54A, BUY55, BUY55-10, A42, BUY55-6, BUY56, BUY56-10, BUY56-4, BUY56-6, BUY57, BUY58, BUY59

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