All Transistors. BUY55-4 Datasheet

 

BUY55-4 Datasheet and Replacement


   Type Designator: BUY55-4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
 

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BUY55-4 Datasheet (PDF)

 9.1. Size:202K  inchange semiconductor
 buy55.pdf pdf_icon

BUY55-4

isc Silicon NPN Power Transistor BUY55DESCRIPTION Collector-Emitter Breakdown Voltage-: V = 125V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general switching applications at higher outputs.ABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: BUY52 , BUY52A , BUY53 , BUY53A , BUY54 , BUY54A , BUY55 , BUY55-10 , 2N2907 , BUY55-6 , BUY56 , BUY56-10 , BUY56-4 , BUY56-6 , BUY57 , BUY58 , BUY59 .

Keywords - BUY55-4 transistor datasheet

 BUY55-4 cross reference
 BUY55-4 equivalent finder
 BUY55-4 lookup
 BUY55-4 substitution
 BUY55-4 replacement

 

 
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