All Transistors. BUY55-6 Datasheet

 

BUY55-6 Datasheet and Replacement


   Type Designator: BUY55-6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO3
 

 BUY55-6 Substitution

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BUY55-6 Datasheet (PDF)

 9.1. Size:202K  inchange semiconductor
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BUY55-6

isc Silicon NPN Power Transistor BUY55DESCRIPTION Collector-Emitter Breakdown Voltage-: V = 125V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general switching applications at higher outputs.ABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: KTB595 | C45H8 | BUY57 | 2SD2469A | BDV12 | BC525 | 2SC2535

Keywords - BUY55-6 transistor datasheet

 BUY55-6 cross reference
 BUY55-6 equivalent finder
 BUY55-6 lookup
 BUY55-6 substitution
 BUY55-6 replacement

 

 
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