BUY56-10 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUY56-10
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 63
Noise Figure, dB: -
Package: TO3
BUY56-10 Transistor Equivalent Substitute - Cross-Reference Search
BUY56-10 Datasheet (PDF)
9.1. Size:202K inchange semiconductor
buy56.pdf
buy56.pdf
isc Silicon NPN Power Transistor BUY56DESCRIPTION Collector-Emitter Breakdown Voltage-: V = 160V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general switching applications at higher outputs.ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
