BUY57 Datasheet. Specs and Replacement
Type Designator: BUY57 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
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BUY57 datasheet
isc Silicon NPN Power Transistor BUY57 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 125V(Min.) (BR)CEO Low Collector Saturation Voltage- V = 1.3V@ I = 10A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general switching applications at higher outputs. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
Detailed specifications: BUY55, BUY55-10, BUY55-4, BUY55-6, BUY56, BUY56-10, BUY56-4, BUY56-6, 2SC5200, BUY58, BUY59, BUY60, BUY61, BUY62, BUY63, BUY64, BUY65
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BJT Parameters and How They Relate
History: ESM2667 | BFW58 | RN1963 | KT837P | NB014HT | BFX13 | BSS25
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