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BUY57 Specs and Replacement


   Type Designator: BUY57
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 130 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 25 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3

 BUY57 Transistor Equivalent Substitute - Cross-Reference Search

   

BUY57 detailed specifications

 ..1. Size:202K  inchange semiconductor
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BUY57

isc Silicon NPN Power Transistor BUY57 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 125V(Min.) (BR)CEO Low Collector Saturation Voltage- V = 1.3V@ I = 10A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general switching applications at higher outputs. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

Detailed specifications: BUY55 , BUY55-10 , BUY55-4 , BUY55-6 , BUY56 , BUY56-10 , BUY56-4 , BUY56-6 , 2SC5200 , BUY58 , BUY59 , BUY60 , BUY61 , BUY62 , BUY63 , BUY64 , BUY65 .

History: FJP5027R | UN511N

Keywords - BUY57 transistor specs

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