All Transistors. C1004 Datasheet

 

C1004 Datasheet and Replacement


   Type Designator: C1004
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO106
 

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C1004 Datasheet (PDF)

 0.1. Size:42K  st
 msc1004mp.pdf pdf_icon

C1004

MSC1004MPRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.1025 - 1150 MHz.RUGGEDIZED VSWR :1.INTERNAL INPUT MATCHING.LOW THERMAL RESISTANCE.P 4.0 W MIN. WITH 9.0 dB GAINOUT =.280 4LFL (SO51)epoxy sealedORDER CODE BRANDINGMSC1004MP 1004MPPIN CONNECTIONDESCRIPTIONThe MSC1004MP is a low-level Class C pulsedtransistor specifically designed for DME/IFF driveror ou

 0.2. Size:44K  st
 msc1004m.pdf pdf_icon

C1004

MSC1004MRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.1025 - 1150 MHz.RUGGEDIZED VSWR :1.INTERNAL INPUT MATCHING.LOW THERMAL RESISTANCE.P 4.0 W MIN. WITH 9.0 dB GAINOUT =.280 2LFL (SO68)epoxy sealedORDER CODE BRANDINGMSC1004M 1004MPIN CONNECTIONDESCRIPTIONThe MSC1004M is a low-level Class C pulsedtransistor specifically designed for DME/IFF driveror output

 0.3. Size:177K  inchange semiconductor
 2sc1004.pdf pdf_icon

C1004

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1004DESCRIPTIONWith TO-3 PackageHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSfor use in horizontal deflection output stages forcolor TV receivesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co

Datasheet: C055P , C066 , C066P , C1 , C100 , C1001 , C1002 , C1003 , BC556 , C101 , C102 , C103 , C106 , C112 , C1-12 , C118 , C119 .

History: 2N3201 | 2SA1163GR | 2SA1417S-TD-E | 2SD1224 | BEL381K | 2SC1181 | 2SC307

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