C1004 Datasheet, Equivalent, Cross Reference Search
Type Designator: C1004
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO106
C1004 Transistor Equivalent Substitute - Cross-Reference Search
C1004 Datasheet (PDF)
msc1004mp.pdf
MSC1004MPRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.1025 - 1150 MHz.RUGGEDIZED VSWR :1.INTERNAL INPUT MATCHING.LOW THERMAL RESISTANCE.P 4.0 W MIN. WITH 9.0 dB GAINOUT =.280 4LFL (SO51)epoxy sealedORDER CODE BRANDINGMSC1004MP 1004MPPIN CONNECTIONDESCRIPTIONThe MSC1004MP is a low-level Class C pulsedtransistor specifically designed for DME/IFF driveror ou
msc1004m.pdf
MSC1004MRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.1025 - 1150 MHz.RUGGEDIZED VSWR :1.INTERNAL INPUT MATCHING.LOW THERMAL RESISTANCE.P 4.0 W MIN. WITH 9.0 dB GAINOUT =.280 2LFL (SO68)epoxy sealedORDER CODE BRANDINGMSC1004M 1004MPIN CONNECTIONDESCRIPTIONThe MSC1004M is a low-level Class C pulsedtransistor specifically designed for DME/IFF driveror output
2sc1004.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1004DESCRIPTIONWith TO-3 PackageHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSfor use in horizontal deflection output stages forcolor TV receivesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
