C652 Datasheet and Replacement

   Type Designator: C652
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 550 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO18
      - BJT Cross-Reference Search