C740 Specs and Replacement
Type Designator: C740
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 450 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 260
Package: TO18
C740 Substitution
- BJT ⓘ Cross-Reference Search
C740 datasheet
PPJC7406 20V N-Channel Enhancement Mode MOSFET SOT-323 Unit inch(mm) 20 V 1.3A Voltage Current Features RDS(ON) , VGS@4.5V, ID@1.3A... See More ⇒
PPJC7404 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-323 Unit inch(mm) 20 V 1A Voltage Current Features RDS(ON) , VGS@4.5V, ID@1.0A... See More ⇒
Detailed specifications: C63, C64, C651, C652, C7, C7076, C720, C722, B772, C742, C744, C760, C762, C764, C8, C855, C866
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