C9001 Datasheet and Replacement
Type Designator: C9001
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO46
C9001 Substitution
C9001 Datasheet (PDF)
dsc9001.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DSC9001Silicon NPN epitaxial planar typeFor general amplificationComplementary to DSA9001DSC5001 in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B High forward curren
Datasheet: C742 , C744 , C760 , C762 , C764 , C8 , C855 , C866 , BC558 , C9002 , C9003 , C9080 , C9081 , C9082 , C9083 , C9084 , C9085 .
History: 2N384 | C932 | BDX71 | ZTX749
Keywords - C9001 transistor datasheet
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History: 2N384 | C932 | BDX71 | ZTX749



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