C9001 Datasheet, Equivalent, Cross Reference Search
Type Designator: C9001
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO46
C9001 Transistor Equivalent Substitute - Cross-Reference Search
C9001 Datasheet (PDF)
dsc9001.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSC9001Silicon NPN epitaxial planar typeFor general amplificationComplementary to DSA9001DSC5001 in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B High forward curren
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SD1669Q | C5T5551 | 2SD1611