C9001 Specs and Replacement
Type Designator: C9001
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO46
C9001 Substitution
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C9001 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DSC9001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA9001 DSC5001 in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B High forward curren... See More ⇒
Detailed specifications: C742, C744, C760, C762, C764, C8, C855, C866, 2SD313, C9002, C9003, C9080, C9081, C9082, C9083, C9084, C9085
Keywords - C9001 pdf specs
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