CJD112 Specs and Replacement

Type Designator: CJD112

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 25 MHz

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: DPAK

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CJD112 datasheet

 9.1. Size:99K  cdil

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CJD112

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CJD110 NPN COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS CJD115 PNP DPAK (TO-252) Plastic Package Designed for General Purpose Power and Switching such as Output or Driver stages in Applications such as Switching Regulators, Converters and Power Amplifiers ABSOLUTE MAXIMUM RATINGS DESCRIPT... See More ⇒

Detailed specifications: CIL771, CIL772, CIL773, CIL911, CIL912, CIL931, CIL932, CIL997, 13005, CJD117, CJD122, CJD127, CJD13003, CJD200, CJD210, CJD2955, CJD3055

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