All Transistors. CJD112 Datasheet

 

CJD112 Datasheet, Equivalent, Cross Reference Search


   Type Designator: CJD112
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 25 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: DPAK

 CJD112 Transistor Equivalent Substitute - Cross-Reference Search

   

CJD112 Datasheet (PDF)

 9.1. Size:99K  cdil
 cjd110 5.pdf

CJD112 CJD112

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyCJD110 NPNCOMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORSCJD115 PNPDPAK (TO-252)Plastic PackageDesigned for General Purpose Power and Switching such as Output or Driver stages in Applications such as SwitchingRegulators, Converters and Power AmplifiersABSOLUTE MAXIMUM RATINGS DESCRIPT

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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