CJD210 Specs and Replacement

Type Designator: CJD210

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12.5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 65 MHz

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: DPAK

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CJD210 datasheet

 0.1. Size:419K  central

 cjd200-cjd210.pdf pdf_icon

CJD210

CJD200 NPN CJD210 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CJD200, CJD210 POWER TRANSISTORS types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current amplifier applications. MARKING FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS (TC=25 C unless otherwise ... See More ⇒

Detailed specifications: CIL932, CIL997, CJD112, CJD117, CJD122, CJD127, CJD13003, CJD200, D965, CJD2955, CJD3055, CJD31C, CJD32C, CJD340, CJD350, CJD41C, CJD42C

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