All Transistors. CJD210 Datasheet

 

CJD210 Datasheet, Equivalent, Cross Reference Search


   Type Designator: CJD210
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 65 MHz
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: DPAK

 CJD210 Transistor Equivalent Substitute - Cross-Reference Search

   

CJD210 Datasheet (PDF)

 0.1. Size:419K  central
 cjd200-cjd210.pdf

CJD210 CJD210

CJD200 NPNCJD210 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY SILICONThe CENTRAL SEMICONDUCTOR CJD200, CJD210 POWER TRANSISTORStypes are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current amplifier applications.MARKING: FULL PART NUMBERDPAK TRANSISTOR CASEMAXIMUM RATINGS: (TC=25C unless otherwise

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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