CL100 Specs and Replacement

Type Designator: CL100

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO39

 CL100 Substitution

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CL100 datasheet

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CL100

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR POWER TRANSISTORS CL100, A, B NPN CK100, A, B PNP TO-39 Metal Can Package Medium Power Transistors Suitable for a wide Range of Medium Voltage and Current Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCER Collector Emitter Voltage 50 V VCBO Co... See More ⇒

 0.1. Size:221K  cdil

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CL100

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP SILICON PLANAR TRANSISTORS CL100S NPN CK100S PNP TO-39 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 50 V Collector -Base Voltage VCBO 60 V Emitter Base Voltage VEBO 5.0 V Collector Current ICM 1.0 A Power Dissipation @ Ta=25 deg C PD 800 mW De... See More ⇒

Detailed specifications: CL055D, CL055P, CL066, CL066A, CL066B, CL066C, CL066D, CL066P, TIP2955, CL116P, CL150, CL151-3, CL151-3B, CL151-3C, CL151-4, CL151-4A, CL151-4B

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