2N3396 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N3396
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO92

2N3396 Transistor Equivalent Substitute - Cross-Reference Search

2N3396 Datasheet (PDF)

..1. Size:61K microelectronics
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..2. Size:1285K sprague
2n2711 2n2712 2n2713 2n2714 2n2923 2n2924 2n2925 2n2926 2n3390 2n3391 2n3391a 2n3392 2n3393 2n3394 2n3395 2n3396 2n3397 2n3398 2n3402.pdf

9.1. Size:296K fairchild semi
2n3390 2n3391 2n3391a 2n3392 2n3393.pdf

Discrete POWER & SignalTechnologies2N33902N33912N3391A2N33922N3393B TO-92CENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 10. See PN100A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO

9.2. Size:54K njs
2n3390a.pdf