CT5606 PDF and Equivalents Search

CT5606 Specs and Replacement

Type Designator: CT5606

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2000 W

Maximum Collector-Base Voltage |Vcb|: 450 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 200 A

Max. Operating Junction Temperature (Tj): 140 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: DISK55

- BJT ⓘ Cross-Reference Search

CT5606 datasheet

Detailed specifications: CT1459, CT1460, CT1462, CT1463, CT1464, CT5603, CT5604, CT5605, 13007, CT5611, CT5650, CT5651, CT5652, CT759, CT760, CT7605, CT761

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