CTN636 Specs and Replacement
Type Designator: CTN636
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO237
CTN636 Substitution
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CTN636 datasheet
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Detailed specifications: CTD1322, CTN391, CTN392, CTN393, CTN491, CTN492, CTN493, CTN635, 8050, CTN637, CTN638, CTN639, CTN640, CTP1032, CTP1033, CTP1034, CTP1035
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