CTP1032 Specs and Replacement
Type Designator: CTP1032
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 60 °C
Electrical Characteristics
Transition Frequency (ft): 0.6 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 13
Noise Figure, dB: -
CTP1032 Substitution
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CTP1032 datasheet
nvert CTP10P095 Suzhou Convert Semiconductor Co ., Ltd. 100V P-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an... See More ⇒
nvert CTP10N066 Suzhou Convert Semiconductor Co ., Ltd. 100V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an... See More ⇒
Detailed specifications: CTN492, CTN493, CTN635, CTN636, CTN637, CTN638, CTN639, CTN640, 2SD2499, CTP1033, CTP1034, CTP1035, CTP1036, CTP1104, CTP1108, CTP1109, CTP1111
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