CTP1035 Datasheet, Equivalent, Cross Reference Search
Type Designator: CTP1035
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 60 °C
Transition Frequency (ft): 1.2 MHz
Collector Capacitance (Cc): 28 pF
Forward Current Transfer Ratio (hFE), MIN: 65
Noise Figure, dB: -
CTP1035 Transistor Equivalent Substitute - Cross-Reference Search
CTP1035 Datasheet (PDF)
ctp10p095.pdf
nvertCTP10P095Suzhou Convert Semiconductor Co ., Ltd.100V P-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an
ctp10n066.pdf
nvertCTP10N066Suzhou Convert Semiconductor Co ., Ltd.100V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an
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