CTP1035 Specs and Replacement
Type Designator: CTP1035
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 60 °C
Electrical Characteristics
Transition Frequency (ft): 1.2 MHz
Collector Capacitance (Cc): 28 pF
Forward Current Transfer Ratio (hFE), MIN: 65
Noise Figure, dB: -
CTP1035 Substitution
- BJT ⓘ Cross-Reference Search
CTP1035 datasheet
nvert CTP10P095 Suzhou Convert Semiconductor Co ., Ltd. 100V P-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an... See More ⇒
nvert CTP10N066 Suzhou Convert Semiconductor Co ., Ltd. 100V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an... See More ⇒
Detailed specifications: CTN636, CTN637, CTN638, CTN639, CTN640, CTP1032, CTP1033, CTP1034, 8550, CTP1036, CTP1104, CTP1108, CTP1109, CTP1111, CTP1320, CTP1330, CTP1340
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