CZT2955 Datasheet. Specs and Replacement
Type Designator: CZT2955 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: SOT223
CZT2955 Substitution
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CZT2955 datasheet
CZT2955 PNP CZT3055 NPN www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CZT2955 and SILICON POWER TRANSISTORS CZT3055 types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 6.0 amps. MARKING FULL PART NUMBER SOT-223 ... See More ⇒
SMD Type Transistors PNP Transistors CZT2955 (KZT2955) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features High Current Low Voltage 1 2 3 Surface Mounted Power Amplifier Application Complement to CZT3055 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol ... See More ⇒
Detailed specifications: CZ1082, CZ581, CZ582, CZT122, CZT127, CZT2222A, CZT2907, CZT2907A, 2SA1015, CZT3019, CZT3055, CZT31C, CZT32C, CZT3904, CZT3906, CZT4033, CZT5338
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