D11C1057 Datasheet. Specs and Replacement

Type Designator: D11C1057  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SIP

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D11C1057 datasheet

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Detailed specifications: D10B1055, D10G1051, D10G1052, D115, D11B1052, D11B1055, D11C1051, D11C1053, 2N5551, D11C10B1, D11C10F1, D11C11B1, D11C11F1, D11C1536, D11C1B1, D11C1F1, D11C201B20

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