All Transistors. D32S10 Datasheet

 

D32S10 Datasheet and Replacement


   Type Designator: D32S10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92
 

 D32S10 Substitution

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D32S10 Datasheet (PDF)

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Datasheet: D32L4 , D32L5 , D32L6 , D32P1 , D32P2 , D32P3 , D32P4 , D32S1 , BD136 , D32S2 , D32S3 , D32S4 , D32S5 , D32S6 , D32S7 , D32S8 , D32S9 .

History: CD9014C | BC108AP | CSC2274F | BC169C

Keywords - D32S10 transistor datasheet

 D32S10 cross reference
 D32S10 equivalent finder
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