D32S5 Datasheet. Specs and Replacement
Type Designator: D32S5 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 160
Package: TO92
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D32S5 datasheet
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Detailed specifications: D32P2, D32P3, D32P4, D32S1, D32S10, D32S2, D32S3, D32S4, D667, D32S6, D32S7, D32S8, D32S9, D32W10, D32W11, D32W12, D32W13
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BJT Parameters and How They Relate
History: 2N3582 | 2N5634 | 2N3855 | 2N3663 | 2N371-33 | 2SA1064 | 2SB120
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