D32S7 Datasheet. Specs and Replacement

Type Designator: D32S7  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO92

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D32S7 datasheet

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Detailed specifications: D32P4, D32S1, D32S10, D32S2, D32S3, D32S4, D32S5, D32S6, BDT88, D32S8, D32S9, D32W10, D32W11, D32W12, D32W13, D32W14, D32W7

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