2N344 Datasheet and Replacement

Order this documentMOTOROLAby 2N3442/DSEMICONDUCTOR TECHNICAL DATA2N3442High-Power IndustrialTransistors10 AMPERENPN silicon power transistor designed for applications in industrial and commercialPOWER TRANSISTORequipment including high fidelity audio amplifiers, series and shunt regulators andNPN SILICONpower switches.140 VOLTS Collector Emitter Sustaining Vol

2N34392N3440SILICON NPN TRANSISTORS STMicroelectronics PREFERREDSALESTYPES NPN TRANSISTORDESCRIPTION The 2N3439 and 2N3440 are silicon epitaxialplanar NPN transistors in jedec TO-39 metal casedesigned for use in consumer and industrialline-operated applications. These devices are particularly suited as drivers inhigh-voltage low current inverters, switching andseri

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

2N3442High-Power IndustrialTransistorsNPN silicon power transistor designed for applications in industrialand commercial equipment including high fidelity audio amplifiers,series and shunt regulators and power switches.http://onsemi.comFeatures10 AMPERE Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min)POWER TRANSISTOR Excellent Second Breakdown Capabi

2N3442High-Power IndustrialTransistorsNPN silicon power transistor designed for applications in industrialand commercial equipment including high fidelity audio amplifiers,series and shunt regulators and power switches.http://onsemi.comFeatures10 AMPERE Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min)POWER TRANSISTOR Excellent Second Breakdown Capabi

2N34422N4347HIGH POWER INDUSTRIAL TRANSISTORSHIGH POWER INDUSTRIAL TRANSISTORSNPN silicon transistors designed for applications in industrial and commercial equipment including highfidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Susta

AAA

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

2N3441SEMELABMECHANICAL DATADimensions in mm (inches)MEDIUM POWERSILICON NPN 6.35 (0.250)8.64 (0.340)3.68(0.145) rad.TRANSISTOR3.61 (0.142)max.3.86 (0.145)rad.FEATURES Low Saturation Voltages High Voltage Ratings Maximum SafeOperatingAreaCurves for DC and Pulse Operation.1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439CSM4 / 2N3439CSM4R 2N3440CSM4 / 2N3440CSM4R High Voltage Hermetic Ceramic Surface Mount Package. Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) 2N3439 2N3440Symbols Parame

2N3447Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

2N3445Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

2N3439DCSM2N3440DCSMHIGH VOLTAGE, MEDIUM POWER, NPNDUAL TRANSISTOR IN AHERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONSFEATURES2.29 0.20 1.65 0.13 1.40 0.15(0.055 0.006)(0.09 0.008) (0.065 0.005) DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR2 3 HERMETIC CERAMIC SURFACE

Product Specification www.jmnic.comSilicon NPN Power Transistors 2N3445 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU

Product Specification www.jmnic.comSilicon NPN Power Transistors 2N3446 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU

2N3439 thru 2N3440 Qualified Levels: NPN LOW POWER SILICON JAN, JANTX, Available on TRANSISTOR JANTXV and JANS commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-39 and low profile U4 and UA packaging. Microsemi also offers nume

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 DEVICES LEVELS JAN 2N3439 * 2N3440JANTX 2N3439L * 2N3440LJANTXV

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 DESCRIPTION With TO-3 package Excellent Safe Operating Area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER CON

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3441 DESCRIPTION With TO-66 package Continuous collector current-IC=3A Power dissipation -PD=25W @TC=25 APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: Driver for high power outputs Series and shunt regulators Audio and servo amplifiers

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N3440DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 250 V(Min)CEO(SUS)DC Current Gain-: h = 40(Min) @ I = 20mAFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3442 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER CON

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3445 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3446 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDI