D40N5 Specs and Replacement
Type Designator: D40N5
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 6.5 W
Maximum Collector-Base Voltage |Vcb|: 375 V
Maximum Collector-Emitter Voltage |Vce|: 375 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO202
D40N5 Substitution
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D40N5 datasheet
Silicon N-Channel Power MOSFET Description The MD40N50 uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features V =500V,I =40A DS D Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching application TO-247 Adapter and... See More ⇒
Detailed specifications: D40K1, D40K2, D40K3, D40K4, D40N1, D40N2, D40N3, D40N4, 2SA1015, D40NU1, D40NU2, D40NU3, D40NU4, D40NU5, D40P1, D40P2, D40P3
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