D42C10 Specs and Replacement
Type Designator: D42C10
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 25 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO220
D42C10 Substitution
- BJT ⓘ Cross-Reference Search
D42C10 datasheet
MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S... See More ⇒
Detailed specifications: D41E5, D41E6, D41E7, D41K1, D41K2, D41K3, D41K4, D42C1, MJE340, D42C11, D42C12, D42C2, D42C3, D42C4, D42C5, D42C6, D42C7
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