D44C12 Specs and Replacement

Type Designator: D44C12

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 25 MHz

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TOP66

 D44C12 Substitution

- BJT ⓘ Cross-Reference Search

 

D44C12 datasheet

 ..1. Size:73K  onsemi

d45c12 d44c12.pdf pdf_icon

D44C12

D45C12 (PNP), D44C12 (NPN) Complementary Silicon Power Transistor The D45C12 and D44C12 are for general purpose driver or medium power output stages in CW or switching applications. http //onsemi.com Features 4.0 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - 0.5 V (Max) SILICON POWER High ft for Good Frequency Response Low Leakage Current TRANSISTORS 80... See More ⇒

Detailed specifications: D43D2, D43D3, D43D4, D43D5, D43D6, D44C1, D44C10, D44C11, TIP42C, D44C2, D44C3, D44C4, D44C5, D44C6, D44C7, D44C8, D44C9

Keywords - D44C12 pdf specs

 D44C12 cross reference

 D44C12 equivalent finder

 D44C12 pdf lookup

 D44C12 substitution

 D44C12 replacement