D44C12 Specs and Replacement
Type Designator: D44C12
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 25 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TOP66
D44C12 Substitution
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D44C12 datasheet
D45C12 (PNP), D44C12 (NPN) Complementary Silicon Power Transistor The D45C12 and D44C12 are for general purpose driver or medium power output stages in CW or switching applications. http //onsemi.com Features 4.0 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - 0.5 V (Max) SILICON POWER High ft for Good Frequency Response Low Leakage Current TRANSISTORS 80... See More ⇒
Detailed specifications: D43D2, D43D3, D43D4, D43D5, D43D6, D44C1, D44C10, D44C11, TIP42C, D44C2, D44C3, D44C4, D44C5, D44C6, D44C7, D44C8, D44C9
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History: D43CJ11
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