DQN1006 Datasheet. Specs and Replacement

Type Designator: DQN1006

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

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DQN1006 datasheet

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Detailed specifications: DM30P, DM40-28Y, DM50P, DPT121, DPT122, DPT123, DPT124, DPT2600, 2N5551, DR42R2-126, DR42R2-220, DT100-1000, DT100-1100, DT100-1200, DT1003, DT100-800, DT100-900

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