All Transistors. DT100-1200 Datasheet

 

DT100-1200 Datasheet and Replacement


   Type Designator: DT100-1200
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1500 W
   Maximum Collector-Base Voltage |Vcb|: 1200 V
   Maximum Collector-Emitter Voltage |Vce|: 1000 V
   Maximum Collector Current |Ic max|: 200 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: SPECIAL
 

 DT100-1200 Substitution

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DT100-1200 Datasheet (PDF)

 9.1. Size:222K  cn minos
 mpg100n06 mdt100n06 mps100n06.pdf pdf_icon

DT100-1200

Green ProductMPG100N0660VN-Channel Power MOSFETDESCRIPTION KEYCHARACTERISTICS V =60V,I =100ADS DThe MPG100N06 uses advanced trench technology to provide R

Datasheet: DPT123 , DPT124 , DPT2600 , DQN1006 , DR42R2-126 , DR42R2-220 , DT100-1000 , DT100-1100 , C5198 , DT1003 , DT100-800 , DT100-900 , DT1110 , DT1111 , DT1112 , DT1120 , DT1121 .

History: 2N6408 | DT100-1100 | 3CD5 | BD372D-10 | DC5424 | DC5421 | 3CD6109

Keywords - DT100-1200 transistor datasheet

 DT100-1200 cross reference
 DT100-1200 equivalent finder
 DT100-1200 lookup
 DT100-1200 substitution
 DT100-1200 replacement

 

 
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