DTA114ESA Datasheet. Specs and Replacement

Type Designator: DTA114ESA

SMD Transistor Code: A114ES

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SC-72

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DTA114ESA datasheet

 ..1. Size:60K  rohm

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DTA114ESA

DTA114EM / DTA114EE / DTA114EUA Transistors DTA114EKA / DTA114ESA -100mA / -50V Digital transistors (with built-in resistors) DTA114EM / DTA114EE / DTA114EUA / DTA114EKA / DTA114ESA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit)... See More ⇒

 ..2. Size:342K  htsemi

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DTA114ESA

DT A114EE/DTA114EUA/DTA114EKA /DTA114ESA/DTA114ECA Digital transistors (PNP) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost co... See More ⇒

 ..3. Size:1199K  kexin

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DTA114ESA

DIP Type Transistors Digital Transistors DTA114ESA (KDTA114ESA) TO-92S Unit mm 4.0 0.1 2.48 0.2 45 TYP Features Built-in bias resistors enable the configuration of an inverter circuit 0.48 (max) 0.35 (min ) without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete 2 1 3 0.55 (max) isol... See More ⇒

 6.1. Size:58K  motorola

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DTA114ESA

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA114ES PNP resistor-equipped transistor 1998 May 18 Product specification Supersedes data of 1997 Jul 02 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification o... See More ⇒

Detailed specifications: DT800-450, DRAF143T, DTA113ZKA, DTA113ZSA, DTA113ZUA, DTA114ECA, DRAF143X, DTA114EKA, TIP122, DTA114EUA, DRAF143Z, DTA114GKA, DTA114GSA, DRAF144E, DTA114TKA, DTA114TSA, DTA114TUA

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