All Transistors. DTC114EK Datasheet

 

DTC114EK Datasheet, Equivalent, Cross Reference Search


   Type Designator: DTC114EK
   SMD Transistor Code: EC4
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 5.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SMT

 DTC114EK Transistor Equivalent Substitute - Cross-Reference Search

   

DTC114EK Datasheet (PDF)

 ..1. Size:881K  rohm
dtc114ek dtc124xk.pdf

DTC114EK DTC114EK

 0.1. Size:57K  motorola
pdtc114ek 3.pdf

DTC114EK DTC114EK

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114EKNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design3 Reduces number

 0.2. Size:57K  philips
pdtc114ek 3.pdf

DTC114EK DTC114EK

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114EKNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design3 Reduces number

 0.3. Size:1523K  rohm
dtc114eka.pdf

DTC114EK DTC114EK

DTC114E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R110kDTC114EM DTC114EEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration of

 0.4. Size:1522K  rohm
dtc114eefra dtc114ekafra dtc114emfha dtc114euafra.pdf

DTC114EK DTC114EK

DTC114E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R110kDTC114EM DTC114EEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration of

 0.5. Size:178K  diodes
ddtc114eka.pdf

DTC114EK DTC114EK

DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data GG

 0.6. Size:62K  chenmko
chdtc114ekpt.pdf

DTC114EK DTC114EK

CHENMKO ENTERPRISE CO.,LTDCHDTC114EKPTSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-59/SOT-346) SC-59/SOT-346* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

 0.7. Size:70K  chenmko
chdtc114ekgp.pdf

DTC114EK DTC114EK

CHENMKO ENTERPRISE CO.,LTDCHDTC114EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (/SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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