DTC114EK Datasheet and Replacement
Type Designator: DTC114EK
SMD Transistor Code: EC4
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 5.6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SMT
DTC114EK Substitution
DTC114EK Datasheet (PDF)
pdtc114ek 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114EKNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design3 Reduces number
pdtc114ek 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114EKNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design3 Reduces number
dtc114eka.pdf

DTC114E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R110kDTC114EM DTC114EEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration of
Datasheet: DTB143EC , DTB143EK , DTB143ES , DTC113ZKA , DTC113ZSA , DTC113ZUA , DTC114ECA , DTC115TN3 , A1941 , DTC114EKA , DTC114ESA , DTC114EUA , DTC114GKA , DTC114GSA , DTC114GUA , DTC114TCA , DTC115TM3T5G .
History: 2SC1237
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History: 2SC1237



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