2N3512 Datasheet. Specs and Replacement
Type Designator: 2N3512 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 375 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO5
📄📄 Copy
2N3512 Substitution
- BJT ⓘ Cross-Reference Search
2N3512 datasheet
Detailed specifications: 2N3507S, 2N3507X, 2N3508, 2N3509, 2N350A, 2N351, 2N3510, 2N3511, 2N2222, 2N3513, 2N3514, 2N3515, 2N3516, 2N3517, 2N3518, 2N3519, 2N351A
Keywords - 2N3512 pdf specs
2N3512 cross reference
2N3512 equivalent finder
2N3512 pdf lookup
2N3512 substitution
2N3512 replacement
BJT Parameters and How They Relate
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
2n1307 | 2sa747 | a1941 | 2sd424 datasheet | 2sc536 datasheet | bd140 transistor equivalent | tip122 transistor equivalent | irfz44n equivalent

