All Transistors. EMB59 Datasheet

 

EMB59 Datasheet, Equivalent, Cross Reference Search


   Type Designator: EMB59
   SMD Transistor Code: B59
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC-107C

 EMB59 Transistor Equivalent Substitute - Cross-Reference Search

   

EMB59 Datasheet (PDF)

 ..1. Size:692K  rohm
 emb59.pdf

EMB59 EMB59

EMB59DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter DTr1 and DTr2 EMT6VCC-50VIC(MAX.)-100mA R110kEMB59R2 (SC-107C) 47k lFeatures lInner circuitl l1) Two DTA014Y chips in a EMT6 package.2) Transister elements are independent, eliminatin

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: DRA3115T | BCP68T3

 

 
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