EMB53 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMB53
SMD Transistor Code: B53
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-107C
EMB53 Transistor Equivalent Substitute - Cross-Reference Search
EMB53 Datasheet (PDF)
..1. Size:725K rohm
emb53.pdf
emb53.pdf
EMB53DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter DTr1 and DTr2 EMT6VCEO-50VIC-100mA R14.7kEMB53(SC-107C) lFeatures lInner circuitl l1) Two DTA043T chips in a EMT6 package.2) Transister elements are independent, eliminatingin
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
