EMB4 Datasheet and Replacement

EMB4 / UMB4NDatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCEO-50V (5) (4) (4) (1) (1) IC(MAX.)-100mA (2) (2) (3) (3) R110kWEMB4 UMB4N (SC-107C) SOT-353 (SC-88) lFeatures lInner circuit1) Built-In Biasing Resistors.2) Two DTA114T chips in one pac

EMB4 General purpose transistors (dual digital transistors)FEATURESSOT-563 Two DTA114T chips in a package Marking: B4 (3) (2) (1) 1 Equivalent circuit R1R1(4) (5) (6) Absolute maximum ratings (Ta=25) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA

DISCRETE SEMICONDUCTORS DATA SHEETPEMB4; PUMB4PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = openProduct data sheet 2003 Oct 15Supersedes data of 2001 Sep 14NXP Semiconductors Product data sheetPNP/PNP resistor-equipped transistors; PEMB4; PUMB4R1 = 10 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

EMB4FHA / UMB4NFHAEMB4 / UMB4NDatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCEO-50V (5) (4) (4) (1) (1) IC(MAX.)-100mA (2) (2) (3) (3) R110kWEMB4 UMB4NEMB4FHA UMB4NFHA(SC-107C) SOT-353 (SC-88) lFeatures lInner circuit1) Bui

CHENMKO ENTERPRISE CO.,LTDCHEMB4GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil