EMB4 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMB4
SMD Transistor Code: B4
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-107C
EMB4 Transistor Equivalent Substitute - Cross-Reference Search
EMB4 Datasheet (PDF)
emb4.pdf
EMB4 / UMB4NDatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCEO-50V (5) (4) (4) (1) (1) IC(MAX.)-100mA (2) (2) (3) (3) R110kWEMB4 UMB4N (SC-107C) SOT-353 (SC-88) lFeatures lInner circuit1) Built-In Biasing Resistors.2) Two DTA114T chips in one pac
emb4.pdf
EMB4 General purpose transistors (dual digital transistors)FEATURESSOT-563 Two DTA114T chips in a package Marking: B4 (3) (2) (1) 1 Equivalent circuit R1R1(4) (5) (6) Absolute maximum ratings (Ta=25) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA
pemb4 pumb4.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMB4; PUMB4PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = openProduct data sheet 2003 Oct 15Supersedes data of 2001 Sep 14NXP Semiconductors Product data sheetPNP/PNP resistor-equipped transistors; PEMB4; PUMB4R1 = 10 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
emb4fha.pdf
EMB4FHA / UMB4NFHAEMB4 / UMB4NDatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCEO-50V (5) (4) (4) (1) (1) IC(MAX.)-100mA (2) (2) (3) (3) R110kWEMB4 UMB4NEMB4FHA UMB4NFHA(SC-107C) SOT-353 (SC-88) lFeatures lInner circuit1) Bui
chemb4gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMB4GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: FJP13007H2TU-F080 | 2N3123 | 2SA2198
History: FJP13007H2TU-F080 | 2N3123 | 2SA2198
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