EMB4FHA Datasheet, Equivalent, Cross Reference Search
Type Designator: EMB4FHA
SMD Transistor Code: B4
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-107C
EMB4FHA Transistor Equivalent Substitute - Cross-Reference Search
EMB4FHA Datasheet (PDF)
..1. Size:1200K rohm
emb4fha.pdf
emb4fha.pdf
EMB4FHA / UMB4NFHAEMB4 / UMB4NDatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCEO-50V (5) (4) (4) (1) (1) IC(MAX.)-100mA (2) (2) (3) (3) R110kWEMB4 UMB4NEMB4FHA UMB4NFHA(SC-107C) SOT-353 (SC-88) lFeatures lInner circuit1) Bui
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
