E1B Datasheet and Replacement

   Type Designator: E1B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 5 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.25 A
   Max. Operating Junction Temperature (Tj): 140 °C
   Noise Figure, dB: -
   Package: M122
      - BJT Cross-Reference Search