2N355 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N355
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 140 °C
Transition Frequency (ft): 12 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO23
2N355 Transistor Equivalent Substitute - Cross-Reference Search
2N355 Datasheet (PDF)
2n3553.pdf
DISCRETE SEMICONDUCTORSDATA SHEET2N3553Silicon planar epitaxialoverlay transistor1995 Oct 27Product specificationSupersedes data of October 1981File under Discrete Semiconductors, SC08aPhilips Semiconductors Product specificationSilicon planar epitaxial2N3553overlay transistorAPPLICATIONS DESCRIPTION The 2N3553 is intended for use in VHF and UHF The device is a s
2n3558.pdf
2N3558Dimensions in mm (inches). Bipolar NPNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = dia.IC = 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3 can b
Datasheet: 2N354 , 2N3543 , 2N3544 , 2N3545 , 2N3546 , 2N3547 , 2N3548 , 2N3549 , BC337 , 2N3550 , 2N3551 , 2N3552 , 2N3553 , 2N3554 , 2N356 , 2N3563 , 2N3564 .
