2N3571 PDF and Equivalents Search

 

2N3571 Specs and Replacement


   Type Designator: 2N3571
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics


   Transition Frequency (ft): 1200 MHz
   Collector Capacitance (Cc): 0.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO72
 

 2N3571 Substitution

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2N3571 datasheet

 9.1. Size:319K  rca
 2n105 2n206 2n247 2n269 2n301 2n301a 2n331 2n356 2n357 2n358.pdf pdf_icon

2N3571

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 9.2. Size:16K  advanced-semi
 2n3570.pdf pdf_icon

2N3571

2N3570 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO- 72 MAXIMUM RATINGS IC 50 mA VCB 30 V VCE 15 V VEB 3.0 V PDISS 200 mW @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC 1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE 500 OC/W JC NONE CHARACTER... See More ⇒

Detailed specifications: 2N3565 , 2N3566 , 2N3567 , 2N3568 , 2N3569 , 2N356A , 2N357 , 2N3570 , 8050 , 2N3572 , 2N3576 , 2N3577 , 2N3579 , 2N357A , 2N358 , 2N3580 , 2N3581 .

Keywords - 2N3571 pdf specs

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