2N3572 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3572
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 13 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 0.8 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO71-2
2N3572 Transistor Equivalent Substitute - Cross-Reference Search
2N3572 Datasheet (PDF)
9.2. Size:16K advanced-semi
2n3570.pdf
2n3570.pdf
2N3570NPN SILICON HIGH FREQUENCY TRANSISTORDESCRIPTION:The 2N3570 is Designed for HighFrequency Low Noise Amplifier andOscillator Applications.PACKAGE STYLE TO- 72MAXIMUM RATINGSIC 50 mAVCB 30 VVCE 15 VVEB 3.0 VPDISS 200 mW @ TC = 25 OCTJ -65 OC to +200 OCTSTG -65 OC to +200 OC1 = EMITTER 2 = BASE3 = COLLECTOR 4 = CASE500 OC/WJCNONECHARACTER
Datasheet: 2N3566 , 2N3567 , 2N3568 , 2N3569 , 2N356A , 2N357 , 2N3570 , 2N3571 , BC546 , 2N3576 , 2N3577 , 2N3579 , 2N357A , 2N358 , 2N3580 , 2N3581 , 2N3582 .
