2N3572 Datasheet. Specs and Replacement

Type Designator: 2N3572  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 13 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1000 MHz

Collector Capacitance (Cc): 0.8 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO71-2

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2N3572 datasheet

 9.1. Size:319K  rca

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2N3572

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 9.2. Size:16K  advanced-semi

 2n3570.pdf pdf_icon

2N3572

2N3570 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO- 72 MAXIMUM RATINGS IC 50 mA VCB 30 V VCE 15 V VEB 3.0 V PDISS 200 mW @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC 1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE 500 OC/W JC NONE CHARACTER... See More ⇒

Detailed specifications: 2N3566, 2N3567, 2N3568, 2N3569, 2N356A, 2N357, 2N3570, 2N3571, BC558, 2N3576, 2N3577, 2N3579, 2N357A, 2N358, 2N3580, 2N3581, 2N3582

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