2N358 Datasheet. Specs and Replacement
Type Designator: 2N358 📄📄
Material of Transistor: Ge
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO5
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2N358 Substitution
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2N358 datasheet
2N3583 2N3584 www.centralsemi.com 2N3585 DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS (TC=25 C) SYMBOL 2N3583 2N3584 2N3585 UNITS Collector-Base Voltage VCBO 250 375 500 V Collector-Emitt... See More ⇒
NPN 2N3583 2N3584 2N3585 NPN SILICON POWER TRANSISTORS. High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N3583 250 VCBO Collector-Base Voltage (IE= 0) 2N3584 330 V 2N3585 440 2N3583 175 VCEO Collector-Emitter Voltage (IB= 0) 2N3584 250 V 2N3585 3... See More ⇒
2n3583 2n3584 2n3585 2n4240 2n6420 2n6421 2n6422 2n6423.pdf ![]()
A Boca Semiconductor Corp. http //www.bocasemi.com A http //www.bocasemi.com A http //www.bocasemi.com A http //www.bocasemi.com ... See More ⇒
Detailed specifications: 2N357, 2N3570, 2N3571, 2N3572, 2N3576, 2N3577, 2N3579, 2N357A, 2SC2625, 2N3580, 2N3581, 2N3582, 2N3583, 2N3584, 2N3584X, 2N3585, 2N3586
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BJT Parameters and How They Relate
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