ED1802L Specs and Replacement
Type Designator: ED1802L
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 132
Package: TO92
ED1802L Substitution
- BJT ⓘ Cross-Reference Search
ED1802L datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 ED1802 PNP general purpose transistor 1999 Apr 27 Product specification Supersedes data of 1997 May 27 Philips Semiconductors Product specification PNP general purpose transistor ED1802 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 25 V). 1 emitter 2 base APPLICATIONS 3 collector ... See More ⇒
Detailed specifications: ED1702N, ED1801, ED1801K, ED1801L, ED1801M, ED1801N, ED1802, ED1802K, TIP142, ED1802M, ED1802N, ED2502, ED592, ED8050, ED8050C, ED8550, ED8550C
Keywords - ED1802L pdf specs
ED1802L cross reference
ED1802L equivalent finder
ED1802L pdf lookup
ED1802L substitution
ED1802L replacement
