ED8050C Specs and Replacement
Type Designator: ED8050C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 1.7 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO92
ED8050C Substitution
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ED8050C datasheet
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Detailed specifications: ED1802, ED1802K, ED1802L, ED1802M, ED1802N, ED2502, ED592, ED8050, TIP32C, ED8550, ED8550C, EFT212, EFT213, EFT214, EFT250, EFT306, EFT307
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