EQS0196 Datasheet. Specs and Replacement

Type Designator: EQS0196  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 13 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 600 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO72

  📄📄 Copy 

 EQS0196 Substitution

- BJT ⓘ Cross-Reference Search

 

EQS0196 datasheet

NO PDF data!

Detailed specifications: EN871, EN914, EN915, EN916, EN918, EN930, EN956, EQF0009, 2N4401, ERS100, ERS120, ERS140, ERS160, ERS180, ERS200, ERS225, ERS250

Keywords - EQS0196 pdf specs

 EQS0196 cross reference

 EQS0196 equivalent finder

 EQS0196 pdf lookup

 EQS0196 substitution

 EQS0196 replacement