ESM1000 Datasheet and Replacement

   Type Designator: ESM1000
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 400 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 150 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO83
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