ESM12A Specs and Replacement
Type Designator: ESM12A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO66
ESM12A Substitution
- BJT ⓘ Cross-Reference Search
ESM12A datasheet
DIM1800ESM12-A000 Single Switch IGBT Module Replaces DS5529-3 DS5529-4 October 2010 (LN27613) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1800A Non Punch Through Silicon IC(PK) (max) 3600A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the a... See More ⇒
DIM2400ESM12-A000 Single Switch IGBT Module Replaces DS5536-3.0 DS5536-4 October 2010 (LN27615) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the... See More ⇒
Detailed specifications: ESM1000T, ESM10040, ESM10045, ESM10050, ESM113, ESM114, ESM117, ESM118, 2N5401, ESM12B, ESM132, ESM133, ESM134, ESM135, ESM136, ESM137, ESM138
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