ESM636 Specs and Replacement
Type Designator: ESM636
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
ESM636 Substitution
- BJT ⓘ Cross-Reference Search
ESM636 datasheet
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Detailed specifications: ESM5045DV, ESM5671, ESM5672, ESM6045AV, ESM6045DV, ESM622, ESM623, ESM635, BC548, ESM637, ESM638, ESM639, ESM640, ESM642, ESM643, ESM690, ESM691
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