F102 Datasheet and Replacement

March 2013FCP25N60N_F102N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mFeatures Description RDS(on) = 107 m (Typ.)@ VGS = 10 V, ID = 12.5 AThe SupreMOS MOSFET is Fairchild Semiconductors next-generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC)employing a deep trench filling process that differentiate it from

July 2011FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mFeatures Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superio

January 2012FDP020N06B_F102N-Channel PowerTrench MOSFET 60V, 313A, 2mFeatures Description RDS(on) = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tailored Low FOM RDS(on) *QGto minimize the on-state resistance while maintaining superior switching performance

July 2011FDP150N10A_F102tmN-Channel PowerTrench MOSFET 100V, 50A, 15mFeatures Description RDS(on) = 12.5m ( Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performa

May 2011FDP085N10A_F102N-Channel PowerTrench MOSFET 100V, 96A, 8.5mFeatures General Description RDS(on) = 7.35m ( Typ.)@ VGS = 10V, ID = 96A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching perf

March 2013FDP083N15A _F102 N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mFeatures Description RDS(on) = 6.85 m ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while maintain-ing superior switching perfo

October 2012FDP075N15A_F102 / FDB075N15AN-Channel PowerTrench MOSFET 150V, 130A, 7.5mFeatures Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc

June 2010 TMSupreMOSFCI25N60N_F102tmN-Channel MOSFET 600V, 25A, 0.125Features Description RDS(on) = 0.107 ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 57nC)process that differentiates it from preceding multi-epi based tech-

November 2013FDP030N06B_F102N-Channel PowerTrench MOSFET60 V, 195 A, 3.1 mFeatures Description RDS(on) = 2.67 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on) * QGlored to minimize the on-state resistance while maintainingsuperior switching perfor

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1029/DThe RF LineUHF Power TransistorMRF1029. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 1.5 WattsPower Gain 8.0 dB Min, Class AB1.5 W, TO 1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1029/DThe RF LineUHF Power TransistorMRF1029. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 1.5 WattsPower Gain 8.0 dB Min, Class AB1.5 W, TO 1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPF102/DJFET VHF AmplifierNChannel DepletionMPF1021 DRAIN3GATE2 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDS 25 Vdc123DrainGate Voltage VDG 25 VdcGateSource Voltage VGS 25 VdcCASE 2904, STYLE 5Gate Current IG 10 mAdc TO92 (TO226AA)Total Device D

December 2013FCP190N60_GF102N-Channel SuperFET II MOSFET600 V, 20.2 A, 199 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 57 nC)

MPF102N-Channel RF Amplifier This device is designed for electronic switching applications such as low ON resistance analog switching. Sourced from process 50.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Source Voltage -25 VIGF Forward Gate Current 10 mATJ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MPF102Preferred DevicesJFET VHF AmplifierN-Channel - DepletionFeatures Pb-Free Package is Available*http://onsemi.com1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Source Voltage VDS 25 VdcGATEDrain-Gate Voltage VDG 25 VdcGate-Source Voltage VGS -25 Vdc2 SOURCEGate Current IG 10 mAdcTotal Device Dissipation PD@ TA = 25C 350 mWDerate above 25C 2

SSF1020 Feathers: ID =60A Advanced trench process technology BV=100V Ultra low Rdson, typical 16mohm Rdson=16mTyp. High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1020 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology i

SSF1020D Main Product Characteristics: VDSS 100V RDS(on) 16m(typ.) ID 60A DPAK Ma rk in g an d pi n Sc h ema t ic diag r am Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body re

SSF1020A Feathers: ID =60A Advanced trench process technology BV=100V Ultra low Rdson, typical 16mohm Rdson=20mmax. High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1020A is a new generation of middle voltage and high current NChannel enhancement mode trench power SSF1020A TOP View (D2PAK) MOSFET. This ne