FA1F4Z Specs and Replacement

Type Designator: FA1F4Z

SMD Transistor Code: L64_L65_L66

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 22 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 135

Noise Figure, dB: -

Package: SOT23

 FA1F4Z Substitution

- BJT ⓘ Cross-Reference Search

 

FA1F4Z datasheet

 ..1. Size:156K  nec

 fa1f4z.pdf pdf_icon

FA1F4Z

This datasheet has been download from www.datasheetcatalog.com Datasheets for electronics components. ... See More ⇒

 9.1. Size:170K  nec

 fa1f4m.pdf pdf_icon

FA1F4Z

... See More ⇒

 9.2. Size:168K  nec

 fa1f4n.pdf pdf_icon

FA1F4Z

... See More ⇒

Detailed specifications: F4, F5, FA1A3Q, FA1A4M, FA1A4P, FA1A4Z, FA1F4M, FA1F4N, TIP41C, FA1L3M, FA1L3N, FA1L4L, FA1L4M, FB2060A, FB2060B, FB3423, FB3424

Keywords - FA1F4Z pdf specs

 FA1F4Z cross reference

 FA1F4Z equivalent finder

 FA1F4Z pdf lookup

 FA1F4Z substitution

 FA1F4Z replacement