FA1L3N Specs and Replacement

Type Designator: FA1L3N

SMD Transistor Code: L82

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.47

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: SOT23

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FA1L3N datasheet

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Detailed specifications: FA1A3Q, FA1A4M, FA1A4P, FA1A4Z, FA1F4M, FA1F4N, FA1F4Z, FA1L3M, 2N3904, FA1L4L, FA1L4M, FB2060A, FB2060B, FB3423, FB3424, FB3726, FB3727

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